SAN FRANCISCO--MRAM chip supplier Everspin Technologies Inc. Wednesday (March 8) introduced its first system-level product line, partly as a way to seed the still-developing market for higher density MRAM devices based on spin-transfer-torque (ST) technology.

Everspin (Chandler, Ariz.) introduced a family of storage accelerators, nvNITRO, said to harness the power of ST-MRAM to deliver extremely fast read and write times with ultra-low latency. The company said initial nvNITRO accelerators will be available in capacities of a 1GB and 2GB, based on Everspin’s 256Mb DDR3 ST-MRAM. Additional capacities from 4GB up to 16GB are expected to be available later in this year using Everspin’s forthcoming 1 Gb DDR4 ST-MRAM.

“It’s definitely a new avenue for us to get the technology into the marketplace in a different way,” said Joe O’Hare, Everspin’s director of product marketing, in an interview with EE Times. “That doesn’t mean that we are backing off at all on supplying memory chips to the market. That’s still our primary business.”

Everspin remains the only company to have shipped a commercial MRAM product. Everspin began shipping MRAM in 2006 when it was still part of Freescale and now claims to have shipped more than 60 million MRAM devices.
       
    Everspin's nvNITRO storage accelerator boats performance of 1.5 million IOPS with 6 microsecond end-to-         end latency. Soource: Everspin.  

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