Everspin ST-Mram

Source：wridy company limited Date：2018-03-08 10:18:23

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Everspin’s first-generation of MRAM technology—the vast majority of the products it has shipped thus far—is based on toggle-mode MRAM technology, which ultimately would not scale much beyond the 16 Mb density that makes up the bulk of Everspin’s shipments. The company’s second- and third-generations of MRAM have been of the ST-MRAM variety, with the most recently utilizing perpendicular magnetic tunnel junction (pMTJ) spin-torque technology. Everspin last August became the first company to announce sampling of pMTJ based ST-MRAM, which is believed to be the MRAM technology that offers the best scalability, shape dependence and magnetic scalability.

Everspin's nvNITRO storage accelerator boats performance of 1.5 million IOPS with 6 microsecond end-to-end latency. Soource: Everspin.

MRAM, or magneto-resistive random access memory, has been in development since the 1990s. Based on the same magnetics technology used in the hard disk drive industry since the 90s, it is one of a group of several emerging technologies that have been considered candidates for next-generation memory to replace the semiconductor industry’s stalwarts such as DRAM and NAND flash, which are facing serious scaling challenges as the industry moves to smaller nodes.

Over the years, a large number of companies has been involved in MRAM development to one degree or another, including semiconductor heavyweights such as IBM, Intel and Samsung. Currently, there are also a handful of startups developing pMTJ ST-MRAM, including Avalanche Technology and Spin Transfer Technologies, which announced that it was sampling pMTJ ST-MRAM devices earlier this year.

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Everspin ST-Mram